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| (R) STTH302S HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) 3A 200 V 175 C 0.75 V 35 ns FEATURES AND BENEFITS Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature s s s s SMC DESCRIPTION The STTH302S, which is using ST's new 200V planar technology, is specially suited for switching mode base drive & transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(AV) IFSM Tstg Tj Parameter Repetitive peak reverse voltage Average forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Tl = 107C =0.5 Value 200 3 100 - 65 + 175 175 Unit V A A C C tp = 10 ms Sinusoidal THERMAL PARAMETERS Symbol Rth (j-l) Junction to lead Parameter Maximum 20 Unit C/W April 2002 - Ed: 1A 1/5 STTH302S STATIC ELECTRICAL CHARACTERISTICS Symbol IR* Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test: * tp = 5ms, < 2% ** tp = 380s, < 2% Min. Typ. Max. 3 Unit A VR = VRRM 4 IF = 3 A IF = 3 A 0.66 75 0.95 0.75 V VF** To evaluate the maximum conduction losses use the following equation : P = 0.60 x IF(AV) + 0.05 IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS Symbol trr tfr VFP Parameter Reverse recovery time Forward recovery time Forward recovery voltage Tj = 25C Tj = 25C Tj = 25C Tests conditions IF =1 A Irr = -50 A/s VR = 30V IF = 3 A dIF/dt = 50 A/s VFR = 1.1 x VFmax IF = 3 A dIF/dt = 50 A/s 70 1.6 Min. Typ. Max. 35 Unit ns ns V 2/5 STTH302S Fig. 1: Average forward power dissipation versus average forward current. PF(AV)(W) 3.0 = 0.05 = 0.1 = 0.2 Fig. 2: Average forward current versus ambient temperature ( = 0.5) IF(AV)(A) 3.5 = 0.5 Rth(j-a)=Rth(j-l) 2.5 =1 3.0 2.5 2.0 2.0 1.5 1.5 Rth(j-a)=75C/W S=1cm 1.0 T 1.0 0.5 0.5 IF(AV)(A) 0.0 0.0 0.5 1.0 1.5 2.0 2.5 =tp/T 3.0 tp Tamb(C) 0.0 3.5 0 25 50 75 100 125 150 175 Fig. 3: Relative variation of thermal impedance junction ambient versus pulse duration (Printed circuit board epoxy FR4). Zth(j-a)/Rth(j-a) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 = 0.2 = 0.5 Fig. 4: current. IFM(A) 100.0 Forward voltage drop versus forward Tj=125C (Maximum values) 10.0 Tj=125C (Typical values) Tj=25C (Maximum values) 0.3 0.2 0.1 0.0 1.0 T = 0.1 Single pulse tp(s) 1.E+00 1.E+01 =tp/T 1.E+02 VFM(V) tp 0.1 1.E+03 1.E-01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Fig. 5: Junction capacitance versus reverse voltage applied (typical values). C(pF) 100 F=1MHz Vosc=30mV Tj=25C Fig. 6: Reverse recovery time versus dIF/dt (90% confidence). tRR(ns) 100 90 80 70 60 50 40 30 20 Tj=25C Tj=125C IF=3A VR=100V VR(V) 10 1 10 100 1000 10 0 1 10 dIF/dt(A/s) 100 1000 3/5 STTH302S Fig. 7: Peak reverse recovery current versus dIF/dt (90% confidence). IRM(A) 6.0 IF=3A VR=100V Fig. 8: Reverse recovery charges versus dI F/dt (90% confidence). QRR(nC) 100 90 80 IF=3A VR=100V 5.0 4.0 Tj=125C 70 Tj=125C 60 50 40 3.0 2.0 30 1.0 Tj=25C Tj=25C 20 10 0 1000 dIF/dt(A/s) 0.0 1 10 100 dIF/dt(A/s) 1 10 100 1000 Fig. 9: Relative variations of dynamic parameters versus junction temperature. IRM; tRR; QRR [Tj] / IRM; tRR; QRR [Tj = 25C] 3.5 IF=3A dIF/dt=200A/s VR=100V Fig. 10: Thermal resistance junction to ambient versus copper surface under each lead (epoxy FR4, e = 35m). Rth(j-a)(C/W) 100 90 80 3.0 QRR 70 60 50 2.5 2.0 tRR 40 30 20 1.5 Tj(C) 1.0 25 50 75 100 125 IRM 10 0 S(cm) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 150 175 4/5 STTH302S PACKAGE MECHANICAL DATA SMC DIMENSIONS E1 REF. A1 A2 b c E A1 Millimeters Min. Max. 2.45 0.20 3.2 0.41 8.15 7.15 4.70 6.25 1.60 1.90 0.05 2.90 0.15 7.75 6.60 4.40 5.55 0.75 Inches Min. 0.075 0.002 0.114 0.006 0.305 0.260 0.173 0.218 0.030 Max. 0.096 0.008 0.126 0.016 0.321 0.281 0.185 0.246 0.063 D E E1 E2 b C L A2 E2 D L FOOTPRINT 3.3 2.0 4.2 2.0 Ordering code STTH302S s Marking U32 Package SMC Weight 0.245 g Base qty 2500 Delivery mode Tape & reel Epoxy meets UL 94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5 |
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